View TGA4502-SCC_1170445.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Product Data Sheet
July 22, 2003
K Band High Power Amplifier
Key Features
* * * * * * * *
TGA4502-SCC
17-27 GHz Application Frequency Range 22 dB Nominal Gain 29 dBm Nominal P1dB 37dBm Nominal OTOI 15 dB Nominal Return Loss 0.25 um pHEMT 2MI Technology Bias 7V @ 760 mA Chip Dimensions 1.52 x 3.29 x .1mm
Product Description
The TriQuint TGA4502-SCC is a compact High Power Amplifier MMIC for K-band applications. The part is designed using TriQuint's proven standard 0.25 um gate power pHEMT production process. The TGA4502-SCC provides a nominal 29 dBm of output power at 1 dB gain compression from 17-27 GHz with a small signal gain of 22 dB. The part is ideally suited for low cost emerging markets such as K-band Satellite Communications, Point-to-Point Radio, and Point-to-Multi Point Communications. The TGA4502-SCC is 100% DC and RF tested on-wafer to ensure performance compliance.
P1dB (dBm)
Primary Applications
* * * K Band Sat-Com Point-to-Point Radio Point-to-Multipoint Communications
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Id = 760mA
35 33 31 29 27 25 23 21 17 18 19 20 21 22 23 24 25 26 27
P1dB Psat
Frequency (GHz)
30 24 18 12
G ain
30 24 12 6 18
6 0 -6 -12 -18 -24 -30
Inpu t t Output
0 -6 -12 -18 -24 -30 18 20 22 24 26 28 30 32
14
16
Frequency (G Hz)
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Product Data Sheet
July 22, 2003 TGA4502-SCC TABLE I MAXIMUM RATINGS 1/ SYMBOL
V
+
PARAMETER
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE
8V -5V TO 0V 880 mA 28 mA 26 dBm 5.3 W 150 C 320 C -65 to 150 C
NOTES
2/
VI+ | IG | PIN PD TCH TM TSTG 1/ 2/
2/ 2/ 2/, 3/ 4/, 5/
These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Under RF drive, the supply current may rise to 1100 mA without damage. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
3/ 4/
5/
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
TABLE II DC PROBE TEST
(TA = 25 C, Nominal)
July 22, 2003 TGA4502-SCC
SYMBOL
Idss, Q1 G m, Q1 Vp, Q1,2, 3-6, 7-10 VBVGD, Q1-10 VBVGS, Q1,2,3-6,7-10
PARAMETER
Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Drain Breakdown Voltage Gate-Source
MINIMUM
60 132 -1.5 -30 -30
MAXIMUM
282 318 -0.5 -13 -13
UNIT
mA mS V V V
Note: Q1 & Q2 are 600 um FETs. Q3-6 & Q7-10 are 2400 um FETs. Q1-10 is a 6000 um FET.
TABLE III RF CHARACTERIZATION TABLE
(TA = 25 C, Nominal) Vd = 7V, Id = 760 mA
SYMBOL
Gain
PARAMETER
Small Signal Gain
TEST CONDITION
F = 17 - 18 GHz F = 17.5, 18 GHz F = 20, 22, 24 GHz F = 26.5 GHz F = 27 GHz F = 17 - 27 GHz F = 17.5, 18, 20, 22, 24 GHz F = 26.5 GHz F = 17 - 27 GHz F = 17.5, 18, 20, 22, 24 GHz F = 26.5 GHz F = 17 - 27 GHz F = 18, 26.5 GHz F = 17 - 27 GHz F = 18, 26 GHz
MINIMUM
-17 18 17 --------27 -34.5
LIMITS TYPICAL
22 -23 -20 20 --15 --30
UNITS MAXIMUM
------12 10 -12 10 ----dB
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
P1dB OTOI *
Output Power @ 1dB Gain Compression Output Third Order Intercept
dBm
37 --
dBm
* Pin/tone = -7dBm, Separation = 0.010 GHz
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
TABLE IV THERMAL INFORMATION Test Conditions TCH o ( C) 150 Vd = 7 V Id = 760 mA Pdiss = 5.3 W
July 22, 2003 TGA4502-SCC
Parameter RJC Thermal Resistance (channel to backside of carrier)
RJC (C/W) 15.1
TM (HRS) 1 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil o CuMo Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
July 22, 2003 TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
30 24 18 12
Gain
30 24 12 6 18
6 0 -6 -12 -18 -24 -30
Inpu t t Output
0 -6 -12 -18 -24 -30
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
35 33
Psat
P1dB (dBm)
31 29 27 25 23 21 17 18 19 20 21 22 23 24 25 26 27
P1dB
Frequency (GHz)
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
5
Gain (dB)
Product Data Sheet
July 22, 2003 TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
40
39
38 OTOI (dBm)
37
36
35
34 18 20 22 Frequency (GHz) 70 60 IMD5 @ 22GHz IMD3 & IMD5 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 26 Pout/Tone (dBm) 24 26
IMD3 @ 22GHz
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
July 22, 2003 TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
At Frequency: 18GHz 30 25 Pout/tone (dBm) 20 15 10 5 0 -15 -10 -5 0 20 5 IMD3 & IMD5 (dBm) Pout/tone (dBm) -10 -25 -40 -55 -70 30 25 20 15 10 5 0 -15
At Frequency: 20GHz 20 5 -10 -25 -40 -55 -70 -10 -5 0 5 10 Pin (dBm) IMD3 & IMD5 (dBm)
7
Single Tone Power IMD3 IMD5
Single Tone Power IMD3 IMD5
5
10
Pin (dBm)
At Frequency: 24GHz 30 25 Pout/tone (dBm) 20 15 10 5 0 -15 -10 -5 0 5 10 Pin (dBm)
Single Tone Power IMD3 IMD5
At Frequency: 26GHz 20 5 IMD3 & IMD5 (dBm) -10 -25 -40 -55
-70
30 25 Pout/tone (dBm) 20 15 10 5 0 -15 -10 -5 0 5 10
Single Tone Power IMD3 IMD5
20 5 -10 -25 -40 -55 IMD3 & IMD5 (dBm)
-70
Pin (dBm)
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
July 22, 2003 TGA4502-SCC
Recommended Assembly Diagram
Vg (one side optional)
100pF 0.01F DQ cap (opt.)
Vd (one side optional for Id < 780 mA)
100pF
Input TFN Output TFN
100pF
100pF
Vg Vd
Notes: 1. Connection to power det, ref diode not shown. 2. 0.1F cap on gate, drain lines not shown but required. 3. For high power operation, gate voltage is recommended from both sides. 4. Drain voltage is required from both sides for Id > 780mA.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
July 22, 2003 TGA4502-SCC
TGA4502 built-in power detector
Vdet
100pF
Vbias
100pF
RF IN
RF OUT
TGA4502 with external test coupler
(amplifier bias connections not shown)
On-chip diode functions as envelope detector External coupler and DC bias required
TGA4502 measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, 10K load
10
10K
Video out (Vdet)
D e te c to r vo ltag e (V) 1
TGA4502
External DC bias 50
C=2pF
0.1
RF OUT External coupler (-20dB)
RF OUT
0.01 8 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm)
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
Mechanical Drawing
0.875 (0.034) 0.095 (0.004) 0.612 (0.024) 1.262 (0.046) 1.898 (0.075)
July 22, 2003 TGA4502-SCC
3.286 (0.129) 1.524 (0.060)
7
3
4
5
6
1.382 (0.544)
3.136 (0.123)
0.686 (0.027)
1
8
0.833 (0.033)
2
0.373 (0.015)
9
15
14
13
12
11
10
0.000 0.875 (0.034) 1.262 (0.050) 1.898 (0.075) 0.000 0.220 (0.009) 0.610 (0.024) 3.004 (0.118) 3.188 (0.126)
0.098 (.004)
Units: Millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC
Bond pad #1 Bond pad #2 Bond pad #3 Bond pad #4 Bond pad #5 Bond pad #6 Bond pad #7 Bond pad #8
(RF Input) (RF Output) VG2 DQ VG3 VD3 DET OUT PWR DET
0.200 x 0.100 (0.008 x 0.004) 0.200 x 0.100 (0.008 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.180 x 0.100 (0.007 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.175 x 0.100 (0.007 x 0.004)
Bond pad #9 Bond pad #10 Bond pad #11 Bond pad #12 Bond pad #13 Bond pad #14 Bond pad #15
REF2 REF1 VD3 VG3 DQ VG2 REF3
0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.180 x 0.100 (0.007 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
July 22, 2003 TGA4502-SCC
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Die are shipped in H20-074149 waffle packs.
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

▲Up To Search▲

Price & Availability of TGA4502-SCC

	To Download TGA4502-SCC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .